Diodes Inc. optimized its DXTN/P 78Q and 80Q series of ultra-low VCE(sat) (collector-emitter saturation voltage) NPN and PNP transistors with high conduction efficiency and thermal performance for demanding automotive power switching and control systems. All 12 devices in the series are rated for continuous operation in 12-, 24-, and 48-V applications at up to +175°C, offering high electrostatic-discharge (ESD) robustness (HBM 4 kV, CDM 1 kV).
Typical applications include gate-driving MOSFETs and IGBTs, power line and load switching, low-dropout (LDO) voltage regulation, DC-DC conversion, and driving motors, solenoids, relays, and actuators.
Both series span BVCEO (breakdown voltage, collector-emitter, base open) ratings from 30 to 100 V and deliver robust current handling. The DXTN/P 80Q series provides extra headroom for demanding designs, with continuous ratings up to 10 A and peak pulse capability of 20 A.
Ultra-low saturation voltage (just 17 mV at 1 A) and an on-state resistance as low as 12 mΩ minimize conduction losses, which can help designers cut conduction losses by up to 50% versus previous generations.
Housed in the ultra-compact PowerDI 3333-8 package (3.3 × 3.3 mm), these devices cut an application’s PCB footprint by up to 75% versus the traditional SOT223, freeing space for additional functionality. A large underside heatsink delivers ultra-low thermal resistance (RθJL) of 4.2°C/W.
The DXTN/P 78Q and DXTN/P 80Q series, both now available, cost between $0.19 and $0.21, and $0.20 and $0.22, respectively, in 6,000-piece quantities. Standard compliance versions, the DXTN/P 78 and 80 series, are also available and suitable for industrial and commercial applications.
