Diodes expands automotive MOSFETs for EV systems

Diodes Incorporated has expanded its PowerDI8080-5 automotive-compliant N-channel MOSFET portfolio with a new 100 V device featuring low RDS(ON), alongside additional 40 to 80-V options.

All devices use an 8 × 8mm gullwing-leaded package and are designed to reduce conduction losses and improve efficiency in power conversion and motor control applications across electric vehicles (EVs) and hybrid electric vehicles (HEVs) platforms.

The 100V-rated DMTH10H1M7SPGWQ, with a maximum RDS(ON) of 1.5mΩ, targets 48-V BLDC motor drives used in systems such as electric power steering and braking, as well as battery disconnect units and onboard chargers (OBCs). An 80V-rated option, the DMTH81M2SPGWQ, supports similar mid-voltage applications.

For lower-voltage subsystems, the 40V-rated DMTH4M40SPGWQ offers a maximum RDS(ON) of 0.4mΩ for 12-V BLDC motors and dc-dc conversion in EV auxiliary systems, including thermal management and actuation.

A logic-level variant, the DMTH4M40LPGWQ, delivers 0.64mΩ RDS(ON) at 4.5-V gate drive for microcontroller-based loads such as fans and pumps. The 60V-rated DMTH6M70SPGWQ is designed for 24-V applications.

The PowerDI8080-5 package has a 64mm² footprint, which is about 40% smaller than TO-263 (D2PAK), and a 1.7-mm profile. Copper clip bonding reduces thermal resistance (RthJC) to as low as 0.3° C/W, supporting high current operation.

The gullwing lead design enables automated optical inspection (AOI) and improves reliability under temperature cycling in automotive environments.


Filed Under: Power Electronics, Technology News