By Kang Yoon-seung
SEOUL, March 17 (Yonhap) — Samsung Electronics Co. said Tuesday it unveiled its next-generation high-bandwidth memory (HBM), namely HBM4E, during an annual technology conference hosted by U.S. tech giant Nvidia Corp.
The South Korean tech giant introduced updates in its development of HBM4E products as it highlighted its capacity as a total memory solution supplier for Nvidia’s Vera Rubin AI platform during Nvidia GTC 2026, which kicked off Monday (U.S. time) for a four-day run in California.
It marked the first time Samsung Electronics unveiled the physical HBM4E chip, which is expected to support speeds of 16 gigabits per second per pin and bandwidth of 4.0 terabytes per second.
Last month, Samsung Electronics began the first commercial shipment of sixth-generation HBM, or HBM4, that it says offers “ultimate performance” for artificial intelligence (AI) computing, becoming the first in the world to commercialize the most advanced chip.
Samsung Electronics also introduced hybrid copper bonding (HCB) technology, which enables stacking of more than 16 layers while reducing thermal resistance by 20 percent compared to thermal compression bonding (TCB), highlighting its packaging capabilities for the next-generation HBM.
“In order for innovation in the AI industry, a strong AI system, such as the Vera Rubin platform, is essential,” the South Korean tech giant said.
“Samsung Electronics plans to continue supplying high-performance memory solutions supporting the Vera Rubin platform,” it added.
The chipmaker added the two companies intend to lead a transition in the global AI infrastructure paradigm on the back of such ties.
During the event, Samsung Electronics set up an exhibition booth comprising three zones — AI Factories, Local AI and Physical AI — introducing the firm’s next-generation chips meeting demand from the AI industry.
This file photo taken Jan. 29, 2026, shows Samsung Electronics Co.’s building in southern Seoul. (Yonhap)
colin@yna.co.kr
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